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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors

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dc.contributor.authorCho, Sungjaeko
dc.contributor.authorButch, Nicholas P.ko
dc.contributor.authorPaglione, Johnpierreko
dc.contributor.authorFuhrer, Michael S.ko
dc.date.accessioned2015-11-20T10:25:24Z-
dc.date.available2015-11-20T10:25:24Z-
dc.date.created2014-08-04-
dc.date.created2014-08-04-
dc.date.issued2011-05-
dc.identifier.citationNANO LETTERS, v.11, no.5, pp.1925 - 1927-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/201401-
dc.description.abstractUltrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi(2)Se(3) are prepared by mechanical exfoliation on 300 nm SiO(2)/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi(2)Se(3) FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectTOPOLOGICAL-INSULATOR-
dc.subjectSURFACE-STATES-
dc.subjectTRANSPORT-
dc.subjectBI2TE3-
dc.titleInsulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors-
dc.typeArticle-
dc.identifier.wosid000290373000012-
dc.identifier.scopusid2-s2.0-79955925120-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue5-
dc.citation.beginningpage1925-
dc.citation.endingpage1927-
dc.citation.publicationnameNANO LETTERS-
dc.contributor.localauthorCho, Sungjae-
dc.contributor.nonIdAuthorButch, Nicholas P.-
dc.contributor.nonIdAuthorPaglione, Johnpierre-
dc.contributor.nonIdAuthorFuhrer, Michael S.-
dc.type.journalArticleArticle-
dc.subject.keywordAuthortopological insulator-
dc.subject.keywordAuthorbismuth selenide-
dc.subject.keywordAuthorsurface state-
dc.subject.keywordAuthorfield-effect transistor-
dc.subject.keywordPlusTOPOLOGICAL-INSULATOR-
dc.subject.keywordPlusSURFACE-STATES-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusBI2TE3-
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