DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Yonghun | ko |
dc.contributor.author | Baek, Seung Heon | ko |
dc.contributor.author | Jeon, Chang Hoon | ko |
dc.contributor.author | Lee, Young Gon | ko |
dc.contributor.author | Kim, Jin Ju | ko |
dc.contributor.author | Jung, Ukjin | ko |
dc.contributor.author | Kang, Soo Cheol | ko |
dc.contributor.author | Park, Woojin | ko |
dc.contributor.author | Lee, Seok-Hee | ko |
dc.contributor.author | Lee, Byoung Hun | ko |
dc.date.accessioned | 2015-11-20T09:53:19Z | - |
dc.date.available | 2015-11-20T09:53:19Z | - |
dc.date.created | 2014-10-27 | - |
dc.date.created | 2014-10-27 | - |
dc.date.issued | 2014-08 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.8, pp.37 - 41 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201158 | - |
dc.description.abstract | The accurate characterization of highly leaky dielectrics has been a serious challenge in MOSFET and capacitor studies. We have shown that time domain reflectometry (TDR) can be used to measure the capacitance of ultrathin SiO2 MOS capacitors even at a leakage current density as high as similar to 3000 A/cm(2), which is approximately 10(3) times higher than the limit of a conventional impedance analyzer. The extremely short interaction time of the TDR C-V method makes the TDR capacitance measurement more immune to the leakage current. Since the TDR C-V method does not require special high-frequency test structures other than a ground-signal pad pattern, the TDR C-V method is a promising capacitance measurement method for leaky dielectrics. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | CAPACITANCE-VOLTAGE MEASUREMENT | - |
dc.subject | GATE OXIDE | - |
dc.subject | INTERFACE | - |
dc.subject | THICKNESS | - |
dc.subject | MOSFETS | - |
dc.subject | SEMICONDUCTOR | - |
dc.subject | RELIABILITY | - |
dc.subject | PERFORMANCE | - |
dc.subject | EXTRACTION | - |
dc.subject | CIRCUIT | - |
dc.title | Leakage current limit of time domain reflectometry in ultrathin dielectric characterization | - |
dc.type | Article | - |
dc.identifier.wosid | 000342523700009 | - |
dc.identifier.scopusid | 2-s2.0-84906063048 | - |
dc.type.rims | ART | - |
dc.citation.volume | 53 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 37 | - |
dc.citation.endingpage | 41 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.7567/JJAP.53.08LC02 | - |
dc.contributor.localauthor | Lee, Seok-Hee | - |
dc.contributor.nonIdAuthor | Kim, Yonghun | - |
dc.contributor.nonIdAuthor | Lee, Young Gon | - |
dc.contributor.nonIdAuthor | Kim, Jin Ju | - |
dc.contributor.nonIdAuthor | Jung, Ukjin | - |
dc.contributor.nonIdAuthor | Kang, Soo Cheol | - |
dc.contributor.nonIdAuthor | Park, Woojin | - |
dc.contributor.nonIdAuthor | Lee, Byoung Hun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CAPACITANCE-VOLTAGE MEASUREMENT | - |
dc.subject.keywordPlus | GATE OXIDE | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordPlus | CIRCUIT | - |
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