Facile Synthesis of Few-Layer Graphene with a Controllable Thickness Using Rapid Thermal Annealing

Cited 26 time in webofscience Cited 0 time in scopus
  • Hit : 139
  • Download : 0
Few-layer graphene films with a controllable thickness were grown on a nickel surface by rapid thermal annealing (RTA) under vacuum. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2-3 nm) carbon- and oxygen-containing compounds on a nickel surface; thus, the high-temperature annealing of the nickel samples without the introduction of intentional carbon-containing precursors results in the formation of graphene films. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time, and the resulting films have a limited thickness (<2 nm), even for an extended RTA time. The transferred films have a low sheet resistance of +/- 0.4 k Omega/sq, with similar to 94% +/- 2% optical transparency, making them useful for applications as flexible transparent conductors.
Publisher
AMER CHEMICAL SOC
Issue Date
2012-03
Language
English
Article Type
Article
Citation

ACS APPLIED MATERIALS INTERFACES, v.4, no.3, pp.1777 - 1782

ISSN
1944-8244
DOI
10.1021/am3000177
URI
http://hdl.handle.net/10203/200852
Appears in Collection
CE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 26 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0