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College of Natural Sciences(자연과학대학)Dept. of Chemistry(화학과)CH-Journal Papers(저널논문)

Dissociative adsorption of guanine on Ge(100)

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dc.contributor.authorYoun, Young-Sangko
dc.contributor.authorKim, Do Hwanko
dc.contributor.authorLee, Hye Jinko
dc.contributor.authorKim, Sehunko
dc.date.accessioned2015-11-20T07:38:37Z-
dc.date.available2015-11-20T07:38:37Z-
dc.date.created2015-08-25-
dc.date.created2015-08-25-
dc.date.issued2015-
dc.identifier.citationCHEMICAL COMMUNICATIONS, v.51, no.64, pp.12815 - 12818-
dc.identifier.issn1359-7345-
dc.identifier.urihttp://hdl.handle.net/10203/200795-
dc.description.abstractAdsorption of guanine on Ge(100) was investigated using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. Guanine appears dark in STM images, indicating that its adsorption occurs through N-H dissociation. DFT calculations revealed that "N(1)-H dissociation through an O dative bonded structure'' is the most favorable configuration.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.subjectSCANNING TUNNELING MICROSCOPE-
dc.subjectSEMICONDUCTOR SURFACES-
dc.subjectBINDING-SPECIFICITY-
dc.subjectCONFIGURATION-
dc.subjectCHEMISTRY-
dc.subjectPYRIDINE-
dc.subjectSILICON-
dc.titleDissociative adsorption of guanine on Ge(100)-
dc.typeArticle-
dc.identifier.wosid000358609100027-
dc.identifier.scopusid2-s2.0-84938220350-
dc.type.rimsART-
dc.citation.volume51-
dc.citation.issue64-
dc.citation.beginningpage12815-
dc.citation.endingpage12818-
dc.citation.publicationnameCHEMICAL COMMUNICATIONS-
dc.identifier.doi10.1039/c5cc03532e-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorKim, Do Hwan-
dc.contributor.nonIdAuthorLee, Hye Jin-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSCANNING TUNNELING MICROSCOPE-
dc.subject.keywordPlusSEMICONDUCTOR SURFACES-
dc.subject.keywordPlusBINDING-SPECIFICITY-
dc.subject.keywordPlusCONFIGURATION-
dc.subject.keywordPlusCHEMISTRY-
dc.subject.keywordPlusPYRIDINE-
dc.subject.keywordPlusSILICON-
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CH-Journal Papers(저널논문)
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