DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Kichul | ko |
dc.contributor.author | Lee, Dong-Ho | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.date.accessioned | 2015-11-20T07:29:15Z | - |
dc.date.available | 2015-11-20T07:29:15Z | - |
dc.date.created | 2015-08-03 | - |
dc.date.created | 2015-08-03 | - |
dc.date.created | 2015-08-03 | - |
dc.date.issued | 2015-07 | - |
dc.identifier.citation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.25, no.7, pp.466 - 468 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | http://hdl.handle.net/10203/200697 | - |
dc.description.abstract | This letter presents a dual-mode multi-band second harmonic controlled SOI LDMOS power amplifier (PA). A mode selection switch is designed to have better power handing capability than a conventional switch, which improves performance in low power mode (LPM). To improve the PA's linearity in high power mode (HPM), second harmonic is controlled with the aid of a path for LPM. The PA, implemented with a 0.13-m SOI LDMOS process, operates in triple bands (band 5, 8, and 20) with dual power modes. It is measured using a 16 QAM long-term evolution (LTE) signal with a 10 MHz bandwidth. At 850 MHz, the results show 27.7 dBm average output power (Pout), 31.4 dB gain, and 31.4% power-added efficiency (PAE) with 4% error-vector magnitude (EVM) in HPM and 10.4 dB gain, 15.5 dBm Pout, and 22.5% PAE with 4% EVM in LPM with the LTE signal. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A Dual-Mode Multi-Band Second Harmonic Controlled SOI LDMOS Power Amplifier | - |
dc.type | Article | - |
dc.identifier.wosid | 000357619300016 | - |
dc.identifier.scopusid | 2-s2.0-85027949304 | - |
dc.type.rims | ART | - |
dc.citation.volume | 25 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 466 | - |
dc.citation.endingpage | 468 | - |
dc.citation.publicationname | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.identifier.doi | 10.1109/LMWC.2015.2429115 | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.contributor.nonIdAuthor | Lee, Dong-Ho | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Adaptive bias circuit | - |
dc.subject.keywordAuthor | dual-mode | - |
dc.subject.keywordAuthor | LTE | - |
dc.subject.keywordAuthor | multi-band | - |
dc.subject.keywordAuthor | second harmonic controlled | - |
dc.subject.keywordAuthor | SOI LDMOS PA | - |
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