Browse "School of Electrical Engineering(전기및전자공학부)" by Title 

Showing results 25861 to 25880 of 50978

25861
Moores law lives on - Ultra-thin body SOI and FinFET CMOS transistors look to continue Moores law for many years to come

Chang, LL; Choi, Yang-Kyu; Kedzierski, J; Lindert, N; Xuan, PQ; Bokor, J; Hu, CM; et al, IEEE CIRCUITS DEVICES, v.19, no.1, pp.35 - 42, 2003-01

25862
More Entanglement Implies Higher Performance in Channel Discrimination Tasks

Bae, Joonwoo; Chruscinski, Dariusz; Piani, Marco, PHYSICAL REVIEW LETTERS, v.122, no.14, 2019-04

25863
Morphological control of polymeric films on liquid substrates

Lee, Jung-Yong, 7th Pacific Rim Conference on Rheology (PRCR) 2018, The Korean Society of Rheology, 2018-06-12

25864
Morphological image segmentatin preserving semantic object shapes

Ra, Jong Beom; Park, H.S., Proc. of SPIE Visual Comm. & Image Proc., pp.1330 - 1340, 1999-01

25865
Morphological image segmentation for manifesting ambiguos homogeneous visual objects

Park, H.S.; Ra, Jong Beom, Picture Coding Symposium 1999, pp.179 - 183, 1999-04-21

25866
Morphological image segmentation for realistic image representation preserving semantic object shapes

Park, HS; Ra, Jong Beom, OPTICAL ENGINEERING, v.39, no.7, pp.1909 - 1916, 2000-07

25867
Morphological image segmentation for realistic image representation preserving semantic object shapes = 의미객체 형태를 보존하는 영상표현을 위한 형태론적 영상분할link

Park, Hyun-Sang; 박현상; et al, 한국과학기술원, 1999

25868
Morphology-controlled SWCNT/polymeric microsphere arrays by a wet chemical self-assembly technique and their application for sensors

Huang, Xing-Jiu; Li, Yue; Im, Hyung-Soon; Yarimaga, Oktay; Kim, Ju-Hyun; Jang, Doon-Yoon; Cho, Sung-Oh; et al, NANOTECHNOLOGY, v.17, no.12, pp.2988 - 2993, 2006-06

25869
MOS characteristics of NH3-nitrided N2O-annealed oxides fabricated at reduced pressure

Yoon, Giwan, JPS, pp.330 - 332, 1999-09

25870
MOS CHARACTERISTICS OF NH3-NITRIDED N2O-GROWN OXIDES

Yoon, Giwan; JOSHI, AB; KIM, J; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.14, no.4, pp.179 - 181, 1993-04

25871
MOS characteristics of substituted Al gate on high-kappa dielectric

Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.725 - 727, 2004-11

25872
MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2

Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09

25873
MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES

BHAT, M; KIM, J; YAN, J; Yoon, Giwan; HAN, LK; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.15, no.10, pp.421 - 423, 1994-10

25874
MOS logic network simulation with a swithch-level model = 스위치 레벨 모델을 이용한 MOS 논리 회로망의 시뮬레이션link

Lee, Jae-Cheol; 이재철; et al, 한국과학기술원, 1982

25875
MOS 실리콘-액정 복합 Light Valve

권영세; 김충기; 송종인, 대한젼자공학회 추계 종합학술대회, 1981

25876
MOS 트랜지스터의 전압 - 전류 특성을 이용한 아나로그 곱셈기의 집적회로 구현

김충기, 대한전자공학회 CAD, 반도체, 재료 및 부품연구회 합동학술발표회, 1988

25877
MOS 트랜지스터의 전압-전류 특성을 이용한 아날로그 승적기의 집적회로 구현 = IC implementation of analog multiplier which have the voltage-current characteristric of MOSFETlink

송호준; Song, Ho-Jun; et al, 한국과학기술원, 1988

25878
MoS2 charge trap memory cell 특성 평가

신의중; 임이랑; 임종선; 황완식; 조병진, 제26회 한국반도체학술대회, DB하이텍, 한국반도체산업협회, 한국반도체연구조합, 2019-02-14

25879
MoS2-based 3D stackable charge-trap memory with AlN interface layer for reducing optical phonon scattering

Bae, Sanggeun; Oh, Jungyeop; Kang, Mingu; Choi, Sung-Yool, IEEE EDTM 2023, IEEE, 2023-03-09

25880
MoS2-based floating gate memory with metal nanoparticle and polymer tunneling dielectric layer

Woo, Myung Hun; Jang, Byung Chul; Choi, Jun Hwan; Shin, Gwang Hyuk; Seong, Hye Jeong; Im, Sung Gap; Choi, Sung Yool, ICAMD 2015, ICAMD 2015, 2015-12-09

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