Showing results 3 to 5 of 5
Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory Jeong, Hu Young; Kim, Sung Kyu; Lee, JeongYong; Choi, Sung-Yool, APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, v.102, pp.967 - 972, 2011-03 |
In-Depth Study on the Effect of Active-Area Scale-Down of Solution-Processed TiOx Jung, Seungjae; Kong, Jaemin; Kim, Tae-Wook; Song, Sunghoon; Lee, Kwanghee; Lee, Takhee; Hwang, Hyunsang; et al, IEEE ELECTRON DEVICE LETTERS, v.33, no.6, pp.869 - 871, 2012-06 |
Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices Jeong, Hu Young; Kim, Sung Kyu; Lee, JeongYong; Choi, Sung-Yool, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.10, pp.979 - 982, 2011 |
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