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Investigation of gate-induced drain leakage (GIDL) current in thin body devices: Single-gate ultra-thin body, symmetrical double-gate, and asymmetrical double-gate MOSFETs Choi, Yang-Kyu; Ha, D; King, TJ; Bokor, J, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.42, no.4B, pp.2073 - 2076, 2003-04 |
Separate extraction of source/drain resistances in ultra-thin body SOI MOSFET with underlap structure = SOI 기반의 언더랩 구조를 가지는 MOSFET의 소스/드레인 저항 분리 추출에 관한 연구link Kim, Yong Yoon; 김용윤; et al, 한국과학기술원, 2015 |
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