Showing results 1 to 9 of 9
Analysis of a ridge waveguide using overlapping T-Blocks Cho, YH; Eom, Hyo Joon, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.50, no.10, pp.2368 - 2373, 2002-10 |
Computational Study on the Performance of Si Nanowire pMOSFETs Based on the k . p Method Shin, Mincheol; Lee, S; Klimeck, G, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.9, pp.2274 - 2283, 2010-09 |
Efficient Atomistic Simulation of Heterostucture Field-Effect Transistors Ahn, Yongsoo; Shin, Mincheol, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.668 - 676, 2019-08 |
Efficient device simulations using density functional theory Hamiltonian and non-equilibrium Green's function: heterostructure mode space method and core charge approximation Jeon, Seonghyeok; Shin, Mincheol, JOURNAL OF COMPUTATIONAL ELECTRONICS, v.22, no.5, pp.1167 - 1180, 2023-10 |
Non-equilibrium Greens function approach to three-dimensional carbon nanotube field effect transistor Simulations Shin, Mincheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, no.4, pp.1287 - 1291, 2008-04 |
Performance Assessment of III-V Channel Ultra-Thin-Body Schottky-Barrier MOSFETs Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.726 - 728, 2014-07 |
Quantum transport of holes in 1D, 2D, and 3D devices: the k center dot p method Shin, Mincheol, JOURNAL OF COMPUTATIONAL ELECTRONICS, v.10, no.1-2, pp.44 - 50, 2011-06 |
Simulation Study of Germanium p-Type Nanowire Schottky Barrier MOSFETs Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.34, no.3, pp.342 - 344, 2013-03 |
Three-dimensional quantum simulation of multigate nanowire field effect transistors Shin, Mincheol, MATHEMATICS AND COMPUTERS IN SIMULATION, v.79, no.4, pp.1060 - 1070, 2008-12 |
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