Browse "School of Electrical Engineering(전기및전자공학부)" by Subject interface properties
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| H-2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs Lee, Tae In; Manh-Cuong Nguyen; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Hwang, Wan Sik; Yu, Hyun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1350 - 1353, 2019-09 |
| Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current Lee, Tae In; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Lee, Seung Hwan; Shin, Sung Won; Hwang, Wan Sik; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505, 2019-04 |
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