Browse "School of Electrical Engineering(전기및전자공학부)" by Subject gate-all-around (GAA)

Showing results 1 to 17 of 17

1
A Novel Charge Pumping Technique With Gate-Induced Drain Leakage Current

Lee, Geon-Beom; Kim, Jeong-Yeon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.44, no.5, pp.709 - 712, 2023-05

2
A Vertically Integrated Junctionless Nanowire Transistor

Lee, Byung-Hyun; Hur, Jae; Kang, Min-Ho; Bang, Tewook; Ahn, Dae-Chul; Lee, Dongil; Kim, Kwang-Hee; et al, NANO LETTERS, v.16, no.3, pp.1840 - 1847, 2016-03

3
Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode

Hur, Jae; Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Bang, Tewook; Jeon, Seung-Bae; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.37, no.5, pp.541 - 544, 2016-05

4
Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs

Park, Jun-Young; Yun, Dae-Hwan; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.40, no.12, pp.1909 - 1912, 2019-12

5
Demonstration of Thermally-Assisted Programming with High Speed and Improved Reliability for Junctionless Nanowire NOR Flash Memory

Yu, Ji-Man; Park, Jun-Young; Lee, Geon-Beom; Han, Joon-Kyu; Kim, Myung-Su; Hur, Jae; Yun, Dae-Hwan; et al, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.18, pp.1110 - 1113, 2019-10

6
Eletrothermal analysis of poly-si nanowire and its application to localized annealing of gate-all-around field-effect transistor = 폴리실리콘 나노와이어의 전기적, 열적 특성분석 및 이를 바탕으로 한 트랜지스터에의 응용link

Park, Jun-Young; 박준영; et al, 한국과학기술원, 2016

7
Investigation of Low-Frequency Noise in Nonvolatile Memory Composed of a Gate-All-Around Junctionless Nanowire FET

Jeong, Ui-Sik; Kim, Choong-Ki; Bae, Hagyoul; Moon, Dong-Il; Bang, Tewook; Choi, Ji-Min; Hur, Jae; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.5, pp.2210 - 2213, 2016-05

8
Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels

Park, Jun-Young; Lee, Byung-Hyun; Chang, Ki Soo; Kim, Dong Uk; Jeong, Chanbae; Kim, Choong-Ki; Bae, Hagyoul; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.11, pp.4393 - 4399, 2017-11

9
Investigation of Silicon Nanowire Gate-All-Around Junctionless Transistors Built on a Bulk Substrate

Moon, Dong-Il; Choi, Sung-Jin; Duarte, Juan Pablo; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.4, pp.1355 - 1360, 2013-04

10
Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs

Park, Jun-Young; Moon, Dong-Il; Bae, Hagyoul; Roh, Young Tak; Seol, Myeong-Lok; Lee, Byung-Hyun; Jeon, Chang-Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.7, pp.843 - 846, 2016-07

11
Low-frequency noise in gate-all-around SONOS junctionless transistor for flash memory application = 전면 게이트 정션리스 트랜지스터 기반 전하 트랩 형 플래시 메모리에서의 저주파 잡음 특성에 대한 연구link

Jeong, Uisik; 정의식; et al, 한국과학기술원, 2015

12
Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs

Kim, Min-Kyeong; Choi, Yang-Kyu; Park, Jun-Young, MICROMACHINES, v.13, no.1, 2022-01

13
Reliability Improvement of Gate-All-Around Junctionless SONOS Memory by Joule Heat From Inherent Nanowire Current

Lee, Jung-Woo; Han, Joon-Kyu; Kim, Myung-Su; Yu, Ji-Man; Jung, Jin-Woo; Yun, Seong-Yun; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.11, pp.6133 - 6138, 2022-11

14
Reliability Improvement of Gate-All-Around SONOS Memory by Joule Heat From Gate-Induced Drain Leakage Current

Lee, Jung-Woo; Han, Joon-Kyu; Yu, Ji-Man; Lee, Geon-Beom; Tcho, Il-Woong; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.115 - 119, 2022-01

15
Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Kim, Choong-Ki; Jeon, Chang-Hoon; Bae, Hagyoul; Bang, Tewook; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.3, pp.910 - 915, 2016-03

16
Threshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution

Park, Jun-Young; Bae, Hagyoul; Moon, Dong-Il; Jeon, Chang-Hoon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.37, no.11, pp.1391 - 1394, 2016-11

17
Vertically Integrated Multiple Nanowire Field Effect Transistor

Lee, Byung Hyun; Kang, Min Ho; Ahn, Dae Chul; Park, Jun Young; Bang, Tewook; Jeon, Seung Bae; Hur, Jae; et al, NANO LETTERS, v.15, no.12, pp.8056 - 8061, 2015-12

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