Showing results 1 to 4 of 4
Design consideration of ferroelectric field-effect-transistors with metal-ferroelectric-metal capacitor for ternary content addressable memory Yi, Boram; Hwang, Junghyeon; Oh, Tae Woo; Jeon, Sanghun; Jung, Seong-Ook; Yang, Ji-Woon, SOLID-STATE ELECTRONICS, v.206, 2023-08 |
NANDFlashSim: High-Fidelity, Microarchitecture-Aware NAND Flash Memory Simulation Jung, Myoungsoo; Choi, Wonil; Gao, Shuwen; Wilson, Ellis Herbert, III; Donofrio, David; Shalf, John; Kandemir, Mahmut Taylan, ACM TRANSACTIONS ON STORAGE, v.12, no.2, 2016-02 |
sol-gel법에 의한 비휘발성 메모리용 $SrBi_2Ta_2O_9$ 박막의 제조 및 전기적 특성 평가 = Fabrications and characterizations of electrical properties of $SrBi_2Ta_2O_9$ thin films for non-volatile memory by sol-gel methodlink 신창호; Shin, Chang-Ho; et al, 한국과학기술원, 1997 |
두 전극을 갖는 차세대 비 휘발성 메모리에 대한 연구 = A study of two-terminal next-generation non-volatile memorieslink 유리은; Yu, Lee-Eun; et al, 한국과학기술원, 2007 |
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