Browse "School of Electrical Engineering(전기및전자공학부)" by Subject NEGATIVE CAPACITANCE
Showing results 1 to 4 of 4
| A Steep-Slope Phenomenon by Gate Charge Pumping in a MOSFET Kim, Myung-Su; Yun, Gyeong-Jun; Kim, Wu-Kang; Seo, Myungsoo; Kim, Da-Jin; Yu, Ji-Man; Han, Joon-Kyu; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.4, pp.521 - 524, 2022-04 |
| Comprehensive study of high pressure annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films Oh, Changyong; Tewari, Amit; Kim, Kyungkwan; Kumar, Ulayil Sajesh; Shin, Changhwan; Ahn, Minho; Jeon, Sanghun, NANOTECHNOLOGY, v.30, no.50, 2019-10 |
| Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM Yoon, Jae Seok; Tewari, Amit; Shin, Changhwan; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp.1076 - 1079, 2019-07 |
| Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOSCALE, v.12, no.16, pp.9024 - 9031, 2020-04 |
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