Browse "School of Electrical Engineering(전기및전자공학부)" bySubjectNANOWIRE TRANSISTORS

Showing results 1 to 5 of 5

1
A Comparative Study on Hot-Carrier Injection in 5-story Vertically Integrated Inversion-Mode and Junctionless-Mode Gate-All-Around MOSFETs

Kim, Seong-Yeon; Lee, Byung-Hyun; Hur, Jae; Park, Jun-Young; Jeon, Seung-Bae; Lee, Seung-Wook; Choi, Yang-Kyuresearcher, IEEE ELECTRON DEVICE LETTERS, v.39, no.1, pp.4 - 7, 2018-01

2
A Core Compact Model for Multiple-Gate Junctionless FETs

Hur, Jae; Moon, Dong-Il; Choi, Ji-Min; Seol, Myeong-Lok; Jeong, Ui-Sik; Jeon, Chang-Hoon; Choi, Yang-Kyuresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.7, pp.2285 - 2291, 2015-07

3
First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs With Robust Junction Isolation

Kim, Tae Kyun; Kim, Dong Hyun; Yoon, Young Gwang; Moon, Jung Min; Hwang, Byeong Woon; Moon, Dong-Il; Lee, Gi Seong; et al, IEEE ELECTRON DEVICE LETTERS, v.34, no.12, pp.1479 - 1481, 2013-12

4
Multilevel conductance switching for a monolayer of redox-active metal complexes through various metallic contacts

Seo, Sohyeon; Lee, Junghyun; Choi, Sung-Yoolresearcher; Lee, Hyoyoung, JOURNAL OF MATERIALS CHEMISTRY, v.22, no.5, pp.1868 - 1875, 2012

5
Simple Analytical Bulk Current Model for Long-Channel Double-Gate Junctionless Transistors

Duarte, Juan P.; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyuresearcher, IEEE ELECTRON DEVICE LETTERS, v.32, no.6, pp.704 - 706, 2011-06

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