Showing results 1 to 3 of 3
A Comparative Study on Hot-Carrier Injection in 5-story Vertically Integrated Inversion-Mode and Junctionless-Mode Gate-All-Around MOSFETs Kim, Seong-Yeon; Lee, Byung-Hyun; Hur, Jae; Park, Jun-Young; Jeon, Seung-Bae; Lee, Seung-Wook; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.39, no.1, pp.4 - 7, 2018-01 |
Characterization of high quality nitrided gate dielectric films manufactured in reduced pressure furnace for ultralarge scale integration complementary metal oxide semiconductor applications Yoon, Giwan; Epstein, Y, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.145, no.5, pp.1679 - 1683, 1998-05 |
Metal-oxide-semiconductor characteristics of NH3-nitrided N2O-annealed oxides fabricated at reduced pressure Yoon, Giwan; Epstein, Y, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2045 - 2049, 2000-04 |
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