DSpace at KOASAS: Browsing DSpace

DSpace at KOASAS

Browsing DSpace

Browse "School of Electrical Engineering(전기및전자공학부)" by Subject InP

Sort by:
In order:
Results/Page
Authors/Record:

Showing results 1 to 17 of 17

1	Design and optical characterization of passive pixel with sensitivity-improved InGaAs/InP phototransistors considering light-dependent shunt resistance for near infrared imaging applications Jo, Young Chang; Song, Hong Joo; Choi, Yeon Shik; Kim, Hoon; Park, Hyo Derk; Kwon, Young Se; Choi, Pyong, JAPANESE JOURNAL OF APPLIED PHYSICS, v.46, no.9B, pp.6222 - 6226, 2007-09
2	Development of reflection-type low-power amplifier MMICs using InP-based resonant tunneling diodes = InP 기반 공명 터널 다이오드를 이용한 반사형 저전력 증폭기 집적회로 개발에 대한 연구 link Lee, Jong-Won; 이종원; et al, 한국과학기술원, 2014
3	Development of ultra-low power quantum-effect VCO MMICs based on an InP-based RTD/HBT IC fabrication technology = InP-based RTD/HBT 집적회로 제작기술 기반의 초저전력 양자효과 전압제어발진기 개발에 대한 연구 link Jeong, Yong-Sik; 정용식; et al, 한국과학기술원, 2011
4	Effects of thermal stress on the performance of benzocyclobutene-passivated In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors Yoon, M; Kim, T; Kim, D; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, pp.1910 - 1913, 2004-04
5	Fabrication of InP-based optoelectronic integrated circuit (OEIC) photoreceivers using shared layer integration of heterojunction bipolar transistors and refracting-facet photodiodes Lee, B; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.4B, pp.1956 - 1959, 2004-04
6	InP 기반 Heterogeneous RTD MMIC를 위한 Flip-chip-bonding 기술의 개발 = Development of a flip-chip-bonding technology for InP-based heterogeneous RTD MMICs link 신효종; Shin, Hyo-Jong; et al, 한국과학기술원, 2009
7	InP/InGaAs PIN diode를 이용한 다층구조 MMIC attenuator 제작 및 특성 분석 = Fabrication and characterization of multi-layer MMIC attenuators using InP/InGaAs PIN diodes link 엄현철; Eom, Hyun-Chul; et al, 한국과학기술원, 2008
8	Large-signal modeling of InP/InGaAs single heterojunction bipolar transistors including thermal and impact ionization effects = 열효과와 Impact ionization 효과를 포함한 InP/InGaAs 단일 이종접합 바이폴라 트랜지스터 대신호 모델링 link Kim, Tae-Ho; 김태호; et al, 한국과학기술원, 2002
9	Monolithic integration of InP-Based HEMT and MSM photodiode using InGaAsP (lambda=1.3 mu m) buffer Cha, JH; Kim, JH; Kim, CY; Shin, SH; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.4B, pp.2549 - 2552, 2005
10	Open-circuit voltage improvement in InGaAs/InP heterojunction solar cells Kim, CY; Cha, JH; Kim, JH; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.4B, pp.2523 - 2524, 2005
11	Passivation효과를 고려한 InP기반 HEMT의 공정 최적화 = Fabrication process optimization for InP-based HEMTs considering the passivation effects link 김대희; Kim, Dae-Hee; et al, 한국과학기술원, 2003
12	Resonant tunneling diode/HBT D-flip flop ICs using current mode logic-type monostable-bistable transition logic element with complementary outputs Kim, T; Lee, B; Choi, S; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.44, no.4B , pp.2743 - 2746, 2005-04
13	새로운 Lateral reverse-etching 기술을 이용한 초고속 InP DHBT 제작 = Fabrication of high-speed InP DHBTs using a new lateral reverse-etching technique link 정용식; Jeong, Yong-Sik; et al, 한국과학기술원, 2003
14	초고속 MMIC용 다층구조 InP/InGaAs PIN 스위치의 제작 및 특성 분석 = Fabrication and characterization of multilayer InP/InGaAs PIN switches for high speed mmic applications link 양정길; Yang, Jung-Kil; et al, 한국과학기술원, 2007
15	최적화된 Layout 설계를 이용한 InP 기반 RTD/HBT 기술의 성능 향상 = Performance Improvement of InP-based RTD/HBT Technology using Optimized Geometrical Layout Design link 이종원; Lee, Jong-Won; et al, 한국과학기술원, 2008
16	최적화된 Zn Diffusion 과 p-type Ohmic Contact 공정을 이용한 광통신용 Planar-type InGaAs/InP Avalanche Photodiode 의 제작 및 특성 분석 = Fabrication and Characterization of Planar-type InGaAs/InP Avalanche Photodiodes using Optimized Zn Diffusion and p-type Ohmic Contact for Optical Communications link 김철규; Kim, Cheol-Gyu; et al, 한국과학기술원, 2011
17	측면 반사기와 마이크로렌즈를 갖는 InGaAsP/InP 발광다이오드 = InGaAsP/InP light-emitting diode with sidewall reflector and microlens link 김재호; Kim, Jae-Ho; et al, 한국과학기술원, 2007

Discover

KOASAS

Knowledge Service Development Team, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea. T. 82-42-350-4493 Email. koasas@kaist.ac.kr
Copyright © 2016. Korea Advanced Institute of Science and Technology. All Rights Reserved.

Communities & Collections

rss_1.0 rss_2.0 atom_1.0