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Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET Kuk, Song-Hyeon; Choi, Seongjun; Kim, Hyeong Yun; Ko, Kyul; Jeong, Jaeyong; Geum, Dae-Myeong; Han, Jae-Hoon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.5, pp.3429 - 3432, 2024-05 |
Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation Ang, CH; Tan, SS; Lek, CM; Lin, W; Zheng, ZJ; Chen, T; Cho, Byung Jin, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.4, pp.26 - 28, 2002-04 |
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