Browse "School of Electrical Engineering(전기및전자공학부)" by Subject INTERFACIAL LAYER
Showing results 1 to 5 of 5
| Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure Kim, Gwang-Sik; Yoo, Gwangwe; Seo, Yujin; Kim, Seung-Hwan; Cho, Karam; Cho, Byung-Jin; Shin, Changhwan; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.709 - 712, 2016-06 |
| Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET Ahn, Juhan; Kim, Jeong-Kyu; Kim, Sun-Woo; Kim, Gwang-Sik; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.705 - 708, 2016-06 |
| Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack Kim, Gwang-Sik; Kim, Sun-Woo; Kim, Seung-Hwan; Park, June; Seo, Yujin; Cho, Byung-Jin; Shin, Changhwan; et al, ACS APPLIED MATERIALS INTERFACES, v.8, no.51, pp.35419 - 35425, 2016-12 |
| Fermi-Level Unpinning Technique with Excellent Thermal Stability. for n-Type Germanium Kim, Gwang-Sik; Kim, Seung-Hwan; Lee, Tae In; Cho, Byung Jin; Choi, Changhwan; Shin, Changhwan; Shim, Joon Hyung; et al, ACS APPLIED MATERIALS & INTERFACES, v.9, no.41, pp.35988 - 35997, 2017-10 |
| Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET Kim, Gwang-Sik; Kim, Seung-Hwan; Kim, Jeong-Kyu; Shin, Changhwan; Park, Jin-Hong; Saraswat, Krishna C.; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.36, no.8, pp.745 - 747, 2015-08 |
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