| 1 | H-2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs Lee, Tae In; Manh-Cuong Nguyen; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Hwang, Wan Sik; Yu, Hyun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1350 - 1353, 2019-09 |
| 2 | Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04 |
| 3 | p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices Choi, Won Chul; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43, 2014-01 |
| 4 | Research on improvement of electrical properties of Ge pMOS devices using Vacuum Annealing and Ultrathin Hf layer with sub-1nm EOT = 진공열처리와 Hf박막을 이용한 1nm이하 EOT를 가지는 Ge pMOS구조에서의 전기적 특성 개선에 관한 연구link Chung, Won-Il; 정원일; et al, 한국과학기술원, 2014 |
| 5 | Simulation Study of Germanium p-Type Nanowire Schottky Barrier MOSFETs Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.34, no.3, pp.342 - 344, 2013-03 |
| 6 | The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks Seo, Yujin; Lee, Tae In; Yoon, Chang Mo; Park, Bo Eun; Hwang, Wan Sik; Kim, Hyungjun; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3303 - 33007, 2017-08 |
| 7 | The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts Seo, Yu Jin; Lee, Sukwon; Baek, Seung-heon Chris; Hwang, Wan Sik; Yu, Hyun-Yong; Lee, Seok-Hee; Cho, Byung-Jin, IEEE ELECTRON DEVICE LETTERS, v.36, no.10, pp.997 - 1000, 2015-10 |
| 8 | Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current Lee, Tae In; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Lee, Seung Hwan; Shin, Sung Won; Hwang, Wan Sik; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505, 2019-04 |
| 9 | 서로 다른 High-k 박막에 대해서 TMA 전처리에 따른 Ge/High-k 게이트 구조에서의 계면의 특성과 히스테리시스에 대한 연구 = Study on interface quality and hysteresis of Ge/High-k gate stack with TMA pretreatment for different High-k dielectricslink 이재진; Lee, Jae-Jin; et al, 한국과학기술원, 2012 |
| 10 | 저전력 소자 개발을 위한 대칭 게이트 배열의 저마늄 수직 방향 터널 전계 효과 트랜지스터 연구 = Study on germanium vertical band-to-band tunnel-field effect transistor with symmetric gate arrangement for low power device applicationslink 정우진; Jeong, Woo-Jin; et al, 한국과학기술원, 2014 |
| 11 | 질화물 박막 증착 방법을 이용한 금속/게르마늄 접합의 쇼트키 장벽 높이 조절 = Schottky barrier height modulation of metal/germanium junction by using nitride thin films depositionlink 이석원; Lee, Suk-Won; et al, 한국과학기술원, 2014 |
