Browse "School of Electrical Engineering(전기및전자공학부)" by Subject Equivalent oxide thickness (EOT)
Showing results 1 to 3 of 3
| Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration Park, Youngkeun; Jeong, Jaejoong; Noh, Semin; Kim, Heetae; Kim, Seongho; Kim, Kiryong; Kim, Dongbin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.890 - 895, 2024-01 |
| High-k HfxZr1-xO2 Ferroelectric Insulator by Utilizing High Pressure Anneal Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.6, pp.2489 - 2494, 2020-06 |
| Sub 5 angstrom-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.103 - 108, 2022-01 |
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