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Showing results 1 to 6 of 6

1
Branch cell buffer를 이용한 분기 성능 향상에 관한 연구 = A study of improving performance of branch instructions using branch cell buffer (BCB)link

임연호; Im, Yeon-Ho; et al, 한국과학기술원, 1998

2
Effects of thermal stress on the performance of benzocyclobutene-passivated In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors

Yoon, M; Kim, T; Kim, D; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, pp.1910 - 1913, 2004-04

3
Fabrication and characterization of mmW-band InP/InGaAs PIN phase shifters using a developed BCB-based multi-layer technology = BCB 기반 다층구조를 이용한 밀리미터파 대역 InP/InGaAs PIN phase shifter의 제작 및 특성 분석link

Kim, Mun-Ho; 김문호; et al, 한국과학기술원, 2009

4
High Performance RFIPDs on Thick Oxide Substrate using Cu-BCB Process

inho jeong; ki-joong kim; tong-ook kong; jun-seok kim; hyung-kyu choi; choong-mo nam; dong-wook kim; et al, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.37, no.1, pp.49 - 52, 2003-04

5
Passivation과 field plate 구조를 이용한 고전력 AlGaN/GaN HEMT 제작 = Fabrication of high power AlGaN/GaN HEMTs using passivation and field plate structurelink

김승훈; Kim, Seung-Hun; et al, 한국과학기술원, 2005

6
Passivation효과를 고려한 InP기반 HEMT의 공정 최적화 = Fabrication process optimization for InP-based HEMTs considering the passivation effectslink

김대희; Kim, Dae-Hee; et al, 한국과학기술원, 2003

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