DSpace at KOASAS: Browsing DSpace

DSpace at KOASAS

Browsing DSpace

Browse "School of Electrical Engineering(전기및전자공학부)" by Author Yeo, CC

Sort by:
In order:
Results/Page
Authors/Record:

Showing results 7 to 13 of 13

7	Improvement of electrical properties of MOCVD HfO2 by multistep deposition Yeo, CC; Cho, Byung Jin; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.11, pp.F42 - F44, 2003-11
8	Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool Cho, Byung Jin; Yeo, CC; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S, International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19
9	Metal gate/high-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate Cho, Byung Jin; Yeo, CC; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, Proceedings on 2005 IEEE Conference on Electron Devices and Solid-State Circuits, pp.107 - 110, 2005-12-08
10	MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source Cho, Byung Jin; Joo, MS; Yeo, CC; Whoang, SJ; Matthew, S; Bera, LK; Balasubramanian, N, 2003 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19
11	Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence Cho, Byung Jin; Joo, MS; Yeo, CC; Ching, YL; Loh, WY; Whoang, SJ; Mathew, S, International Conference on Materials for Advanced Technologies, pp.517 - 517, 2003-12-11
12	Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability Cho, Byung Jin; Yeo, CC; Yeo, H; Gao, F; Lee, SJ; Yu, CY; Liu, CW, International Conference on Materials for Advanced Technologies, pp.13 - 13, 2005-07-03
13	Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric Yeo, CC; Cho, Byung Jin; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.5, pp.665 - 669, 2006-05

Discover

KOASAS

Knowledge Service Development Team, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea. T. 82-42-350-4493 Email. koasas@kaist.ac.kr
Copyright © 2016. Korea Advanced Institute of Science and Technology. All Rights Reserved.

Communities & Collections

rss_1.0 rss_2.0 atom_1.0