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ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application Cho, Byung Jin; Yu, HY; Wu, N; Yeo, C; Joo, MS; Li, MF; Zhu, C, 2nd International Conference on Materials for Advanced Technologies, pp.562 - 562, 2003-12-11 |
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