Showing results 2 to 4 of 4
Quantum Simulation of Si, GaAs, GaSb, and Ge Channel Ultra-Thin-Body Double-gate Negative Capacitance FETs Lee, Jaehyun; Jeong, Woo-Jin; Kang, Doo Hyung; Shin, Mincheolresearcher, 2014 IEEE Silicon Nanoelectronics Workshop, IEEE, 2014-06-09 |
Quantum Simulation of Ultra-thin-body Double-Gate Negative Capacitance FETs with Sub-60mV/decade Switching Behavior Lee, Jaehyun; Jeong, Woo-Jin; Kang, Doo Hyung; Shin, Mincheolresearcher, NANO KOREA 2014, NANO KOREA, 2014-07-03 |
Tunnel Field Effect Transistor with an Electron-Hole Bilayer Induced by a Symmetrically Arranged Double-gate Jeong, Woo-Jin; Kim, Tae Kyun; Moon, Jung Min; Shin, Min-Cheolresearcher; Lee, Seok-Heeresearcher, ISPSA-2014, ISPSA-2014, 2014-12-08 |
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