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Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs) Lee, SH; Majhi, P; Oh, J; Sassman, B; Young, C; Bowonder, A; Loh, WY; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020, 2008-09 |
The effect of Ge composition and Si cap thickness on hot carrier reliability of Si/Si1-xGex/Si p-MOSFETs with high-K/metal gate Cho, Byung Jin; Loh, WY; Majhi, P; Lee, SH; Oh, JW; Sassman, B; Young, C; et al, 2008 Symposium on VLSI Technology, pp.56 - 57, 2008-06-17 |
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