Browse "School of Electrical Engineering(전기및전자공학부)" byAuthorYeo, IS

Showing results 1 to 10 of 10

1
A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

Cho, Byung Jinresearcher; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, SOLID-STATE ELECTRONICS, v.44, no.7, pp.1289 - 1292, 2000-07

2
Does short wavelength lithography process degrade the integrity of thin gate oxide?

Kim, SJ; Cho, Byung Jinresearcher; Chong, PF; Chor, EF; Ang, CH; Ling, CH; Joo, MS; et al, MICROELECTRONICS RELIABILITY, v.40, pp.1609 - 1613, 2000-10

3
Electron-beam irradiation-induced gate oxide degradation

Cho, Byung Jinresearcher; Chong, PF; Chor, EF; Joo, MS; Yeo, IS, JOURNAL OF APPLIED PHYSICS, v.88, no.11, pp.6731 - 6735, 2000-12

4
Gate oxide reliability concern associated with X-ray lithography

Cho, Byung Jinresearcher; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2000-08-28

5
Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure

Yue, JMP; Chim, WK; Cho, Byung Jinresearcher; Chan, DSH; Qin, WH; Kim, YB; Jang, SA; et al, IEEE ELECTRON DEVICE LETTERS, v.21, no.3, pp.130 - 132, 2000-03

6
Integrity of gate oxides irradiated under electron-beam lithography conditions

Cho, Byung Jinresearcher; Chong, PF; Chor, EF; Joo, MS; Yeo, IS, Extended Abstract of the 1999 International Conf. on Solid State Devices and Materials (SSDM), pp.182 - 182, 1999-09-08

7
Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

Chong, PF; Cho, Byung Jinresearcher; Chor, EF; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2181 - 2185, 2000-04

8
Isolation process induced wafer warpage

Jang, SA; Yeo, IS; Kim, YB; Cho, Byung Jinresearcher; Lee, SK, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.1, no.1, pp.46 - 48, 1998-07

9
Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions

Cho, Byung Jinresearcher; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.30 - 30, 1999-07-05

10
Reliability of thin gate oxides irradiated under X-ray lithography conditions

Cho, Byung Jinresearcher; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822, 2001-04

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