Browse "School of Electrical Engineering(전기및전자공학부)" byAuthorYeo, CC

Showing results 1 to 13 of 13

1
Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2

Yeo, CC; Joo, MS; Cho, Byung Jinresearcher; Whang, SJ, THIN SOLID FILMS, v.462, pp.90 - 95, 2004-09

2
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; et al, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05

3
Electrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors

Cho, Byung Jinresearcher; Wu, N; Zhu, C; Balasubramanian, N; Yeo, CC; Joo, MS; Yu, HY, 2nd International Conference on Materials for Advanced Technologies, pp.535 - 535, 2003-12-11

4
Electron mobility enhancement using ultrathin pure Ge on Si substrate

Yeo, CC; Cho, Byung Jinresearcher; Gao, E; Lee, SJ; Lee, AH; Yu, CY; Liu, CW; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.10, pp.761 - 763, 2005-10

5
Energy gap and band alignment for (HfO2)(x)(Al2O3)(1-x) on (100) Si

Yu, HY; Li, MF; Cho, Byung Jinresearcher; Yeo, CC; Joo, MS; Kwong, DL; Pan, JS; et al, APPLIED PHYSICS LETTERS, v.81, no.2, pp.376 - 378, 2002-07

6
Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Joo, MS; Cho, Byung Jinresearcher; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10

7
Improvement of electrical properties of MOCVD HfO2 by multistep deposition

Yeo, CC; Cho, Byung Jinresearcher; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.11, pp.F42 - F44, 2003-11

8
Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool

Cho, Byung Jinresearcher; Yeo, CC; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S, International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19

9
Metal gate/high-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate

Cho, Byung Jinresearcher; Yeo, CC; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, Proceedings on 2005 IEEE Conference on Electron Devices and Solid-State Circuits, pp.107 - 110, 2005-12-08

10
MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source

Cho, Byung Jinresearcher; Joo, MS; Yeo, CC; Whoang, SJ; Matthew, S; Bera, LK; Balasubramanian, N, 2003 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19

11
Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence

Cho, Byung Jinresearcher; Joo, MS; Yeo, CC; Ching, YL; Loh, WY; Whoang, SJ; Mathew, S, International Conference on Materials for Advanced Technologies, pp.517 - 517, 2003-12-11

12
Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability

Cho, Byung Jinresearcher; Yeo, CC; Yeo, H; Gao, F; Lee, SJ; Yu, CY; Liu, CW, International Conference on Materials for Advanced Technologies, pp.13 - 13, 2005-07-03

13
Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric

Yeo, CC; Cho, Byung Jinresearcher; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.5, pp.665 - 669, 2006-05

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