Showing results 1 to 4 of 4
High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application Cho, Byung Jin; Kim, SJ; Yu, MB; Li, MF; Xiong, YZ; Zhu, C; Chin, A, Symposium on VLSI Technology, pp.56 - 57, 2005-06-14 |
Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application Yu, MB; Xiong, YZ; Kim, SJ; Balakumar, S; Zhu, CX; Li, MF; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795, 2005-11 |
Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers Kim, SJ; Cho, Byung Jin; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09 |
Niobium oxide (Nb2O5) as a high-K dielectric for RF IC application Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Yu, MB; Xiong, YZ, 3rd International Conference on Materials for Advanced Technologies, pp.10 - 10, 2005-07-03 |
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