Browse "School of Electrical Engineering(전기및전자공학부)" by Author Wu, N
Showing results 1 to 5 of 5
| ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application Cho, Byung Jin; Yu, HY; Wu, N; Yeo, C; Joo, MS; Li, MF; Zhu, C, 2nd International Conference on Materials for Advanced Technologies, pp.562 - 562, 2003-12-11 |
| Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; et al, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05 |
| Electrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors Cho, Byung Jin; Wu, N; Zhu, C; Balasubramanian, N; Yeo, CC; Joo, MS; Yu, HY, 2nd International Conference on Materials for Advanced Technologies, pp.535 - 535, 2003-12-11 |
| Germanium MOS capacitors with ultra thin HfO2 gate dielectric Cho, Byung Jin; Zhang, QC; Zu, C; Wu, N; Chin, A; Li, MF; Bera, LK, International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11 |
| Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si Yu, HY; Wu, N; Li, MF; Zhu, CX; Cho, Byung Jin; Kwong, DL; Tung, CH; et al, APPLIED PHYSICS LETTERS, v.81, no.19, pp.3618 - 3620, 2002-11 |
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