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Formation of GaAs-SOI on Si Substrate By Use of Fluoride Insulators Lee, Hee Chul; Asano, T; Ishiwara, H; Tsutsui, K; Furukawa, S, Extended Abstracts 17th Conf. on Solid State Devices and Materials, pp.217 - 220, 1985 |
Formation of SOI-GaAs on (Ca,Sr)F2/GaAs Structures Lee, Hee Chul; Tsutsui, K; Ishiwara, H; Asano, T; Furukawa, S, Inst. Phys. Conf. Ser, pp.109 - 114, 1985 |
Layered Structures Composed of Si, Ge, GaAs and Fluorides Lee, Hee Chul; Ishiwara, H; Asano, T; Tsutsui, K; Furukawa, S, Mat. Res. Soc. Symp. Proc, pp.241 - 251, 1988 |
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