Browse "School of Electrical Engineering(전기및전자공학부)" by Author Shin, Sung Won
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| Anti-Ferroelectric HZO Blocking Layer in Charge Trap Flash Memory Device Shin, Sung Won; Cho, Byung-Jin; Shin, Eui Joong, 2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES, The Japan Society of Applied Physics, 2021-11-15 |
Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate Lee, Sang Jae; Kim, Min Ju; Lee, Tae Yoon; Lee, Tae In; Bong, Jae Hoon; Shin, Sung Won; Kim, Seongho; et al, AIP ADVANCES, v.9, no.12, 2019-12 |
| High Quality N+/P Junction of Ge Substrate Prepared by initiated CVD Doping Process Kim, Jae Hwan; Shin, Sung Won; Lee, Tae In; Hwang, Wan Sik; Cho, Byung-Jin, 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020, Institute of Electrical and Electronics Engineers Inc., 2020-06-19 |
| Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current Lee, Tae In; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Lee, Seung Hwan; Shin, Sung Won; Hwang, Wan Sik; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505, 2019-04 |
| 반강유전성 하프늄 지르코늄 산화막 적용을 통한 전하 트랩 메모리의 동작 효율성 개선 = Enhancement of operation efficiency by using anti-ferroelectric $HfZrO_2$ layer in charge trap memorylink 신성원; 조병진; et al, 한국과학기술원, 2020 |
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