Showing results 1 to 14 of 14
A NEW TECHNIQUE FOR CHARACTERIZATION OF THE END RESISTANCE IN MODULATION-DOPED FETS Lee, Kwyro; SHUR, MS; VALOIS, AJ; ROBINSON, GY; ZHU, XC; VANDERZIEL, A, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.31, no.10, pp.1394 - 1398, 1984 |
BIAS DEPENDENCE AND LIGHT SENSITIVITY OF (AL,GA)AS/GAAS MODFETS AT 77-K DRUMMOND, TJ; FISCHER, RJ; KOPP, WF; MORKOC, H; Lee, Kwyro; SHUR, MS, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.30, no.12, pp.1806 - 1811, 1983-12 |
CARRIER DISTRIBUTION AND LOW-FIELD RESISTANCE IN SHORT N+-N--N+ AND N+-P--N+ STRUCTURES VANDERZIEL, A; SHUR, MS; Lee, Kwyro; CHEN, TH; AMBERIADIS, K, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.30, no.2, pp.128 - 137, 1983-02 |
CURRENT VOLTAGE AND CAPACITANCE VOLTAGE CHARACTERISTICS OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS Lee, Kwyro; SHUR, MS; DRUMMOND, TJ; MORKOC, H, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.30, no.3, pp.207 - 212, 1983 |
ENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA)AS GAAS-FETS AT CRYOGENIC TEMPERATURES DRUMMOND, TJ; SU, SL; LYONS, WG; FISCHER, R; KOPP, W; MORKOC, H; Lee, Kwyro; et al, ELECTRONICS LETTERS, v.18, no.24, pp.1057 - 1058, 1982 |
FET CHARACTERIZATION USING GATED-TLM STRUCTURE BAIER, SM; SHUR, MS; Lee, Kwyro; CIRILLO, NC; HANKA, SA, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.32, no.12, pp.2824 - 2829, 1985-12 |
IMPEDANCE OF THIN SEMICONDUCTOR-FILMS IN LOW ELECTRIC-FIELD Lee, Kwyro; SHUR, MS, JOURNAL OF APPLIED PHYSICS, v.54, no.7, pp.4028 - 4034, 1983 |
INSTABILITIES IN MODULATION DOPED FIELD-EFFECT TRANSISTORS (MODFETS) AT 77-K FISCHER, R; DRUMMOND, TJ; KOPP, W; MORKOC, H; Lee, Kwyro; SHUR, MS, ELECTRONICS LETTERS, v.19, no.19, pp.789 - 791, 1983 |
LOW FIELD MOBILITY IN GAAS ION-IMPLANTED FETS LEE, K; SHUR, MS; Lee, Kwyro; VU, TT; ROBERTS, PCT; HELIX, MJ, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.31, no.3, pp.390 - 393, 1984-03 |
LOW FIELD MOBILITY OF 2-D ELECTRON-GAS IN MODULATION DOPED ALXGA1-XAS/GAAS LAYERS Lee, Kwyro; SHUR, MS; DRUMMOND, TJ; MORKOC, H, JOURNAL OF APPLIED PHYSICS, v.54, no.11, pp.6432 - 6438, 1983 |
PARALLEL CONDUCTION CORRECTION TO MEASURED ROOM-TEMPERATURE MOBILITY IN (AL, GA)AS-GAAS MODULATION DOPED LAYERS Lee, Kwyro; SHUR, MS; KLEM, J; DRUMMOND, TJ; MORKOC, H, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.23, no.4, pp.230 - 231, 1984 |
PARASITIC MESFET IN (AL, GA) AS/GAAS MODULATION DOPED FETS AND MODFET CHARACTERIZATION Lee, Kwyro; SHUR, MS; DRUMMOND, TJ; MORKOC, H, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.31, no.1, pp.29 - 35, 1984 |
PERSISTENT PHOTOCONDUCTIVITY IN (AL,GA)AS/GAAS MODULATION DOPED STRUCTURES - DEPENDENCE ON STRUCTURE AND GROWTH TEMPERATURE KLEM, J; MASSELINK, WT; ARNOLD, D; FISCHER, R; DRUMMOND, TJ; MORKOC, H; Lee, Kwyro; et al, JOURNAL OF APPLIED PHYSICS, v.54, no.9, pp.5214 - 5217, 1983 |
SOURCE, DRAIN, AND GATE SERIES RESISTANCES AND ELECTRON SATURATION VELOCITY IN ION-IMPLANTED GAAS-FETS LEE, KW; Lee, Kwyro; SHUR, MS; VU, TT; ROBERTS, PCT; HELIX, MJ, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.32, no.5, pp.987 - 992, 1985 |
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