Browse "School of Electrical Engineering(전기및전자공학부)" by Author Park, Jong-Kyung
Showing results 1 to 9 of 9
| Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device Park, Jong-Kyung; Park, Young-Min; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS EXPRESS, v.3, no.9, 2010-08 |
| Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory Kim, Seung-Yoon; Park, Jong-Kyung; Hwang, Wan Sik; Lee, Seung-Jun; Lee, Ki-Hong; Pyi, Seung Ho; Cho, Byung-Jin, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.5, pp.5044 - 5048, 2016-05 |
| Graphene Gate Electrode for MOS Structure-Based Electronic Devices Park, Jong-Kyung; Song, Seung-Min; Mun, Jeong-Hun; Cho, Byung-Jin, NANO LETTERS, v.11, no.12, pp.5383 - 5386, 2011-12 |
| High- κ 유전체를 사용한 Charge-trapping type플래쉬 메모리 소자에서 데이터 Retention 특성과 Erase 속도 개선 = Improvement of data retention and erase speed in charge-trapping type flash memory devices using high-κ dielectriclink 박종경; Park, Jong-Kyung; et al, 한국과학기술원, 2010 |
| Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device Park, Jong-Kyung; Park, Young-Min; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; Cho, Byung-Jin, APPLIED PHYSICS LETTERS, v.96, no.22, 2010-05 |
| In-depth study of reliability for charge-trap-type flash memory devices = 전하포획형 플래시 메모리 소자의 신뢰성에 관한 심층 연구link Park, Jong-Kyung; 박종경; et al, 한국과학기술원, 2014 |
| Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Iim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3314 - 3320, 2011-10 |
| Mechanism of Date Retention Improvement by High Temperature Annealing of Al(2)O(3) Blocking Layer in Flash Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.4, 2011-04 |
| Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
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