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HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT JOSHI, AB; Yoon, Giwan; KIM, JH; LO, GQ; KWONG, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.40, no.8, pp.1437 - 1445, 1993-08 |
HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT Yoon, Gi-Wan; Han, LK; Kim, GW; Yan, J; Kwong, DL, ELECTRONICS LETTERS, v.31, no.14, pp.1196 - 1198, 1995-07 |
SENSITIVITY ANALYSIS OF ION-IMPLANTED SILICON-WAFERS AFTER RAPID THERMAL ANNEALING KIM, YT; JUN, CH; BAEK, JT; Yoo, Hyung Joun, JOURNAL OF ELECTRONIC MATERIALS, v.24, no.10, pp.1413 - 1417, 1995-10 |
THICKNESS UNIFORMITY AND ELECTRICAL-PROPERTIES OF ULTRATHIN GATE OXIDES GROWN IN N2O AMBIENT BY RAPID THERMAL-PROCESSING Yoon, Giwan; JOSHI, AB; AHN, J; KWONG, DL, JOURNAL OF APPLIED PHYSICS, v.72, no.12, pp.5706 - 5710, 1992-12 |
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