Browse "School of Electrical Engineering(전기및전자공학부)" by Subject resistive switching
Showing results 1 to 7 of 7
| A Comprehensive Study of the Resistive Switching Mechanism in Al/TiOx/TiO2/Al-Structured RRAM Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.12, pp.3049 - 3054, 2009-12 |
Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu-Sn alloy-based conductive-bridge random access memory Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.38, 2018-09 |
| Effects of the oxygen vacancy concentration in InGaZnO-Based RRAM = InGaZnO물질기반의 RRAM 소자에 산소 결핍 농도의 효과에 관한 연구link Kim, Moon-Seok; 김문석; et al, 한국과학기술원, 2013 |
| Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications Jeong, Hu-Young; Kim, Jong-Yun; Kim, Jeong-Won; Hwang, Jin-Ok; Kim, Ji-Eun; Lee, Jeong-Yong; Yoon, Tae-Hyun; et al, NANO LETTERS, v.10, no.11, pp.4381 - 4386, 2010-11 |
| Resistive, Switching Characteristics of Sol-Gel Zinc Oxide Films for Flexible Memory Applications Kim, Sung-Ho; Moon, Han-Ul; Gupta, Dipti; Yoo, Seung-Hyup; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.696 - 699, 2009-04 |
| Structure effects on resistive switching of Al/TiOx/Al devices for RRAM applications Yu, Lee-Eun; Kim, Sungho; Ryu, Min-Ki; Choi, Sung-Yool; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.29, no.4, pp.331 - 333, 2008-04 |
| Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping Kim, Sungho; Choi, ShinHyun; Lee, Jihang; Lu, Wei D., ACS NANO, v.8, no.10, pp.10262 - 10269, 2014-10 |
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