Browse "School of Electrical Engineering(전기및전자공학부)" by Subject flash memories
Showing results 1 to 5 of 5
| Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices Chang, M.; Hwang, H.; Jeon, Sanghun., APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
| Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide-charge storage layer Tan, YN; Chim, WK; Cho, Byung Jin; Choi, WK, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.7, pp.1143 - 1147, 2004-07 |
| Quasi-Primitive Block-Wise Concatenated BCH Codes With Collaborative Decoding for NAND Flash Memories Kim, Daesung; Ha, Jeongseok, IEEE TRANSACTIONS ON COMMUNICATIONS, v.63, no.10, pp.3482 - 3496, 2015-10 |
| Symmetric Block-Wise Concatenated BCH Codes for NAND Flash Memories Kim, Daesung; Narayanan, Krishna R.; Ha, Jeongseok, IEEE TRANSACTIONS ON COMMUNICATIONS, v.66, no.10, pp.4365 - 4380, 2018-10 |
| Thermal Stability and Memory Characteristics of HfON Trapping Layer for Flash Memory Device Applications Jeon, Sanghun, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.11, pp.H412 - H415, 2009 |
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