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Browse "School of Electrical Engineering(전기및전자공학부)" by Subject Transition metal dichalcogenides▼aMolybdenum disulfide▼aNegative bias illumination stress▼aThin film transistor▼aThreshold voltage▼aCharge trap▼aDielectric▼aInterface

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pV3D3 계면 층을 통해 전하 트래핑 영향을 억제함으로써 $MoS_2$ 박막 트랜지스터의 NBIS 안정성 향상 = NBIS stability improvement of $MoS_2$ based TFTs by suppressing charge trapping effect via pV3D3 interfacial layerlink

오동식; 최성율; et al, 한국과학기술원, 2020

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