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Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film Jeong, Hu Young; Kim, Jong Yun; Yoon, Tae Hyun; Choi, Sung-Yool, CURRENT APPLIED PHYSICS, v.10, no.1, pp.E46 - E49, 2010-01 |
Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT:PSS/Al memory device Kim, Jong Yun; Jeong, Hu Young; Kim, Jeong Won; Yoon, Tae Hyun; Choi, Sung-Yool, CURRENT APPLIED PHYSICS, v.11, no.2, pp.35 - 39, 2011-03 |
Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility Jung, Seungjae; Kong, Jaemin; Song, Sunghoon; Lee, Kwanghee; Lee, Takhee; Hwang, Hyunsang; Jeon, Sanghun, MICROELECTRONIC ENGINEERING, v.88, no.7, pp.1143 - 1147, 2011-07 |
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