Browse "School of Electrical Engineering(전기및전자공학부)" by Subject INSULATOR
Showing results 1 to 7 of 7
| Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction Kim, Sung-Ho; Jeong, Hu-Young; Choi, Sung-Yool; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.97, no.3, 2010-07 |
| Directional emission of the edge states from the photonic topological structure composed of two-dimensional honeycomb photonic crystals Hajivandi, J; Holcomb, M; Kurt, Hamza, JOURNAL OF OPTICS-INDIA, v.50, no.3, pp.371 - 380, 2021-09 |
| Flexible, Transparent, High Mobility Amorphous In-Ga-Zn-O Thin Film Transistors Fabricated on Textile Park, Junhong; Kim, Chan Young; Kim, Myeong Ji; Choi, Seungyeop; Hwang, Yong ha; Choi, Kyung Cheol, ACS APPLIED ELECTRONIC MATERIALS, v.5, no.3, pp.1606 - 1614, 2023-03 |
| Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques Oh, Hoon Jung; Choi, Kyu Jin; Loh, Wei Yip; Htoo, Thwin; Chua, Soo Jin; Cho, Byung Jin, JOURNAL OF APPLIED PHYSICS, v.102, no.5, 2007-09 |
| Solution-Processed Reduced Graphene Oxide Films as Electronic Contacts for Molecular Monolayer Junctions Seo, Sohyeon; Min, Misook; Lee, Junghyun; Lee, Takhee; Choi, Sung-Yool; Lee, Hyoyoung, ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.51, no.1, pp.108 - 112, 2012-01 |
| Sub 5 angstrom-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.103 - 108, 2022-01 |
| Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors Lee, Sung Won; Shin, Minkwan; Park, Jae Yoon; Kim, Bong Soo; Tu, Deyu; Jeon, Sanghun; Jeong, Unyong, SCIENCE OF ADVANCED MATERIALS, v.7, no.5, pp.874 - 880, 2015-05 |
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