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Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu-Sn alloy-based conductive-bridge random access memory Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.38, 2018-09 |
Non-volatile resistive switching in CuBi-based conductive bridge random access memory device Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.112, no.25, 2018-06 |
Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric -Field Concentrators You, Byoung Kuk; Kim, Jong Min; Joe, Daniel J.; Yang, Kyoung-Hoon; Shin, Youngsoo; Jung, Yeon Sik; Lee, Keon Jae, ACS NANO, v.10, no.10, pp.9478 - 9488, 2016-10 |
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