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Browse "School of Electrical Engineering(전기및전자공학부)" by Author Yu, Hyun-Yong

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Showing results 1 to 14 of 14

1	A new MEMS neural probe system integrated with push-pull microfluidic channels and biosensors for real-time monitoring of neurochemicals Chae, Uikyu; Shin, Hyoguen; Lee, Hyunjoo Jenny; Lee, Jungpyo; Choi, Nakwon; Lee, Yi Jae; Lee, Soo Hyun; et al, 29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016, pp.329 - 332, Institute of Electrical and Electronics Engineers Inc., 2016-01
2	Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure Kim, Gwang-Sik; Yoo, Gwangwe; Seo, Yujin; Kim, Seung-Hwan; Cho, Karam; Cho, Byung-Jin; Shin, Changhwan; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.709 - 712, 2016-06
3	Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET Ahn, Juhan; Kim, Jeong-Kyu; Kim, Sun-Woo; Kim, Gwang-Sik; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.705 - 708, 2016-06
4	Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack Kim, Gwang-Sik; Kim, Sun-Woo; Kim, Seung-Hwan; Park, June; Seo, Yujin; Cho, Byung-Jin; Shin, Changhwan; et al, ACS APPLIED MATERIALS INTERFACES, v.8, no.51, pp.35419 - 35425, 2016-12
5	Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2 Seo, Yujin; Lee, Tae In; Ahn, Hyunjun; Moon, Jungmin; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.4242 - 4245, 2017-10
6	Fermi-Level Unpinning Technique with Excellent Thermal Stability. for n-Type Germanium Kim, Gwang-Sik; Kim, Seung-Hwan; Lee, Tae In; Cho, Byung Jin; Choi, Changhwan; Shin, Changhwan; Shim, Joon Hyung; et al, ACS APPLIED MATERIALS & INTERFACES, v.9, no.41, pp.35988 - 35997, 2017-10
7	Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film Ahn, Hyunjun; Moon, Jungmin; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Hwang, Wan Sik; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.6, pp.2599 - 2603, 2017-06
8	Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks Seo, Yujin; Kim, Choong-Ki; Lee, Tae-In; Hwang, Wan Sik; Yu, Hyun-Yong; Choi, Yang-Kyu; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.3998 - 4001, 2017-10
9	Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET With Metal-Interlayer-Semiconductor Source/Drain Shin, Changho; Kim, Jeong-Kyu; Kim, Gwang-Sik; Lee, Hyunjae; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.11, pp.4167 - 4172, 2016-11
10	Schottky barrier height modulation of metal-interlayer-semiconductor structure depending on contact surface orientation for multi-gate transistors Kim, Gwang-Sik; Lee, Tae In; Cho, Byung Jin; Yu, Hyun-Yong, APPLIED PHYSICS LETTERS, v.114, no.1, 2019-01
11	Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET Kim, Gwang-Sik; Kim, Seung-Hwan; Kim, Jeong-Kyu; Shin, Changhwan; Park, Jin-Hong; Saraswat, Krishna C.; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.36, no.8, pp.745 - 747, 2015-08
12	The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances Kim, Jeong-Kyu; Kim, Gwang-Sik; Nam, Hyohyun; Shin, Changhwan; Park, Jin-Hong; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.35, no.12, pp.1185 - 1187, 2014-12
13	The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks Seo, Yujin; Lee, Tae In; Yoon, Chang Mo; Park, Bo Eun; Hwang, Wan Sik; Kim, Hyungjun; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3303 - 33007, 2017-08
14	The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts Seo, Yu Jin; Lee, Sukwon; Baek, Seung-heon Chris; Hwang, Wan Sik; Yu, Hyun-Yong; Lee, Seok-Hee; Cho, Byung-Jin, IEEE ELECTRON DEVICE LETTERS, v.36, no.10, pp.997 - 1000, 2015-10

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