Browse "School of Electrical Engineering(전기및전자공학부)" by Author Seo, Junbeom
Showing results 1 to 23 of 23
| A Study of Performance in Biaxially Strained Single-Layer Black Phosphorus FET Seo, Junbeom; Lee, Jaehyun; Oh, Jung Hyun; Shin, Mincheol, AWAD2016, AWAD, 2016-07-05 |
| A Variability Study of Ferroelectric Tunnel Junction Shin, Mincheol; Seo, Junbeom; Jeon, Seong Hyeok, WINDS 2018, WINDS 2018, 2018-11-30 |
| Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications Seo, Junbeom; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.4, pp.1793 - 1798, 2017-04 |
| Assessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles Based Approach Kim, Bokyeom; Seo, Junbeom; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.463 - 468, 2020-02 |
| Asymmetrically oxidized interface layer effect of HfO2-based ferroelectric tunnel junctions Kim, Moonhoi; Shin, Mincheol; Seo, Junbeom, Nano Korea 2018, Ministry of Science and ICT, Ministry of Trade, Industry & Energy, 2018-07-13 |
| Atomistic Asymmetric Effect on the Performance of HfO2-based Ferroelectric Tunnel Junctions Seo, Junbeom; Shin, Mincheol, PHYSICAL REVIEW APPLIED, v.14, no.5, 2020-11 |
| Atomistic modeling and simulation study for the ferroelectric-based electronic devices = 강유전체 기반 전자 소자의 원자 수준 모델링 및 시뮬레이션 연구link Seo, Junbeom; Shin, Mincheol; et al, 한국과학기술원, 2021 |
| Biaxial Strain based Performance Modulation of Negative-Capacitance FETs Kim, Moonhoi; Shin, Mincheol; Seo, Junbeom, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.318 - 322, SISPAD 2018, 2018-09-25 |
| DFT Hamiltonian Based Simulation of GaSb UTB-FET with Spin Orbit Coupling Effect Jeon, Seong Hyeok; Shin, Mincheol; Chang, Yoon Hee; Seo, Junbeom, WINDS 2018, WINDS 2018, 2018-11-30 |
| Effect of Atomic Interface on Tunnel Barrier in Ferroelectric HfO2 Tunnel Junctions Seo, Junbeom; Shin, Mincheol, 2020 International Conference on Simulation of Semiconductor Processes and Devices, pp.229 - 232, The Japan Society of Applied Physics, 2020-09 |
| Effects of Strain for Nanowire Schottky Barrier p-MOSFETs Seo, Junbeom; Srivastave, Pooja; Lee, Jaehyun; Jung, Hyo Eun; Kim, Seung chul; Lee, Kwang-Ryeol; Shin, Min-Cheol, ISPSA-2014, ISPSA-2014, 2014-12-08 |
| Effects of Thin Dipole Layer in Silicon Tunnel Field Effect Transistors Lim, Yeongjun; Shin, Mincheol; Seo, Junbeom, IWCN2021, IWCN2021, 2021-05 |
| Effects of Uniaxial Strain on Phosphorene Tunneling Field-Effect Transistors Seo, Junbeom; Shin, Mincheol; Jung, Sungwoo, IWCN2017, IWCN2017, 2017-06-08 |
| Efficient TB-NEGF Simulations of Ultra-Thin Body Tunnel FETs Jeong, Woo Jin; Seo, Junbeom; Shin, Mincheol, International Conference on Simulation of Semiconductor Processes and Devices 2016, SISPAD, 2016-09-06 |
| First Principles Based NEGF Simulations of Si Nanowire FETs Shin, Mincheol; Jeong, Woo Jin; Seo, Junbeom, International Conference on Simulation of Semiconductor Processes and Devices 2016, SISPAD, 2016-09-07 |
| First-Principles Study on the Performance of Hafnia-Based Ferroelectric Tunnel Junction with Symmetric Electrodes Seo, Junbeom; Shin, Mincheol, ICAE 2019, ICAE 2019, 2019-11-05 |
| Multiscale simulation of Schottky barrier tunnel transistors Shin, Min-Cheol; Srivastava, Pooja; Seo, Junbeom; Lee, Jaehyun; Kim, Seungchul; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09 |
| Performance Boost of Si TFETs by Insertion of III-V Dipole Formation Layer: A First Principle Study Lim, Yeongjun; Seo, Junbeom; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.6, pp.2956 - 2961, 2023-06 |
| Performance investigation of uniaxially strained phosphorene n-MOSFETs Jung, Sungwoo; Seo, Junbeom; Heo, Seonghyun; Shin, Mincheol, 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017, pp.341 - 344, SISPAD, 2017-09-07 |
| Quantum transport simulation study of negative capacitance FETs based on the Landau theory and its applications = Landau 이론 기반 NCFET 소자의 양자 수송 전산모사를 통한 소자 특성 연구와 응용link Seo, Junbeom; 서준범; et al, 한국과학기술원, 2016 |
| Quantum transport simulations of the zero temperature coefficient in gate-All-Around nanowire pfets Lee, Hyeongu; Shin, Mincheol; Seo, Junbeom, 24th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.117 - 120, Atomera,et al.,GTS,Infineon,Leti - Cea Tech,Samsung, 2019-09-04 |
| The Performance of Uniaxially Strained Phosphorene Tunneling Field-Effect Transistors Seo, Junbeom; Jung, Sungwoo; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.38, no.8, pp.1150 - 1152, 2017-08 |
| Wigner transport simulation of (core gate) silicon-shell nanowire transistors in cylindrical coordinates Lee, Joon-Ho; Jeong, Woo Jin; Seo, Junbeom; Shin, Mincheol, SOLID-STATE ELECTRONICS, v.139, pp.101 - 108, 2018-01 |
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