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Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices Cho, Byung Jin; Zang, H; Loh, WY; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06 |
Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12 |
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