Showing results 1 to 5 of 5
Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor Nam, Yunyong; Kim, Hee-Ok; Cho, Sung Haeng; Hwang, Chi-Sun; Kim, Taeho; Jeon, Sanghun; Park, Sang-Hee Ko, Journal of Information Display, v.17, no.2, pp.65 - 71, 2016-04 |
Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.32, 2016-08 |
High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance Kim, S. -Y.; Kim, K.; Hwang, Y. H.; Park, J.; Jang, J.; Nam, Yunyong; Kang, Y.; et al, NANOSCALE, v.8, no.39, pp.17113 - 17121, 2016-09 |
Memristive Logic-in-Memory Integrated Circuits for Energy-Efficient Flexible Electronics Jang, Byung Chul; Nam, Yunyong; Koo, Beom Jun; Choi, Junhwan; Im, Sung Gap; Park, Sang-Hee Ko; Choi, Sung-Yool, ADVANCED FUNCTIONAL MATERIALS, v.28, no.2, pp.1704725, 2018-01 |
The Influence of Hydrogen on Defects of In-Ga-Zn-O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3 Kim, Taeho; Nam, Yunyong; Hur, Jihyun; Park, Sang-Hee Ko; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.37, no.9, pp.1131 - 1134, 2016-09 |
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