Showing results 1 to 4 of 4
High-performance ALD HfO2-Al2O3 laminate MIM capacitors for RF and mixed signal IC applications Cho, Byung Jin; Hu, H; Ding, SJ; Lim, HF; Zhu, C; Li, MF; Kim, SJ, International Electron Device Meeting (IEDM), pp.0 - 0, 2003-12-08 |
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12 |
Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface Cho, Byung Jin; Kim, SJ; Lim, HF; Hu, H; Yu, XF; Yu, HY; Li, MF, 2nd International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11 |
Study of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor application Cho, Byung Jin; Lim, HF; Kim, SJ; Hu, H; Yu, XF; Yu, HY; Li, MF, International Conference on Materials for Advanced Technologies, pp.532 - 532, 2003-12-11 |
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