Showing results 1 to 5 of 5
Channel Mobility Boosting in a Poly-Si Channel Using Ge Diffusion Engineering and Hydrogen Plasma Treatment Lee, Tae In; Kim, Min Ju; Shin, Eui Joong; Lee, Gyusoup; Jeong, Jaejoong; Lee, Yun Hee; Lee, Jung Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.3, pp.342 - 345, 2022-03 |
Demonstration of NAND flash erase characteristics using oxide semiconductor channel = 산화물 반도체 채널을 적용한 낸드 플래시의 이레이즈 특성 구현link Lee, Yun Hee; 이윤희; et al, 한국과학기술원, 2023 |
Grain Size Engineering using Amorphous-Ge/Si Stack to Enhance Channel Mobility for NAND Flash Memory Lee, Tae In; Kim, Min Ju; Shin, Eui Joong; Lee, Gyusoup; Jeong, Jaejoong; Lee, Yun Hee; Lee, Jung Hoon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.10, pp.5940 - 5943, 2022-10 |
Ultralow-k Amorphous Boron Nitride Film for Copper Interconnect Capping Layer Kim, Kiryong; Kim, Hyeongjoon; Lee, Sun-Woo; Lee, Min Yung; Lee, Gyusoup; Park, Youngkeun; Kim, Heetae; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.5, pp.2588 - 2593, 2023-05 |
Wafer-scale growth of amorphous boron nitride thin film Kim, Hyeongjoon; Kim, Kiryong; Lee, Sun-Woo; Lee, Min Yung; Lee, Gyusoup; Park, YoungKeun; Kim, Heetae; et al, Boron Nitride Workshop 2023, Montpellier University, 2023-05-29 |
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