Showing results 1 to 5 of 5
Effects of iCVD organic passivation in oxide thin-film transistors under repetitive bending stress for electrical and mechanical stability Jung, Taeseung; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.40, no.4, 2022-07 |
Enhancement of electrical properties of a-IGZO thin film transistor by low temperature (150 degrees C) microwave annealing for flexible electronics Jung, Taeseung; Han, Jung Hoon; Nam, Sooji; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.41, no.3, 2023-05 |
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 degrees C) Annealing Process Gaddam, Venkateswarlu; Das, Dipjyoti; Jung, Taeseung; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.812 - 815, 2021-06 |
Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing Joh, Hongrae; Jung, Minhyun; Hwang, Junghyeon; Goh, Youngin; Jung, Taeseung; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.14, no.1, pp.1326 - 1333, 2022-01 |
Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer Joh, Hongrae; Jung, Taeseung; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2538 - 2542, 2021-05 |
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