Showing results 1 to 6 of 6
A systematic study of high-K interpoly dielectric structures for floating gate flash memory devices Cho, Byung Jin; Zhang, L; He, W; Chan, DSH, IEEE 2nd International conference on memory technology and design, pp.223 - 226, 2007-03-07 |
ALD of HfLaO and AlLaO for Flash Memory Device Application 조병진; He, W, The 4th Korean ALD Workshop, pp.99 - 115, 2008-05-30 |
Electrical and Physical Properties of ALD HfLaO for CMOS Device Application Cho, Byung Jin; He, W; Kim, SJ; Kim, YS, Material Research Society 2008 Spring Meeting, 2008-03-26 |
Enhancement of Dielectric Constant of HfO2 by Lanthanum Incorporation and Crystallization 조병진; He, W; Chan, DSH, 16th Korean Conference on Semiconductors, 2009-02-20 |
High-K Dielectrics for Charge Trap - type Flash Memory Application Cho, Byung Jin; He, W; Pu, J, 2008 Asia-Pacific Workshop on Fundamentals and Applications on Advanced Semiconductor Devices, pp.37 - 41, 2008-07-09 |
Multi-layer high-kappa interpoly dielectric for floating gate flash memory devices Zhang, L; He, W; Chan, DSH; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.52, pp.564 - 570, 2008-04 |
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