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Demonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks and Uniaxial Strain Additivity for 22 nm T Cho, Byung Jin; Suthram, S; Majhi, P; Sun, G; Kalra, P; Harris, R; Choi, KJ, International Electron Device Meeting (IEDM) 2007, pp.0 - 0, 2007-12-01 |
Demonstration of high-performance PMOSFETs using Si-SixGe1-x-Si quantum wells with high-kappa/metal-gate stacks Majhi, P; Kalra, P; Harris, R; Choi, KJ; Heh, D; Oh, J; Kelly, D; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.1, pp.99 - 101, 2008-01 |
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