Browse "School of Electrical Engineering(전기및전자공학부)" by Author Cho, BJ
Showing results 1 to 4 of 4
| Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11 |
| Band Offset FinFET-Based URAM (Unified-RAM) Built on SiC for Multi-Functioning NVM and Capacitorless 1T-DRAM Choi, Yang-Kyu; Han, JW; Ryu, SW; Kim, SH; Chungjin Kim; Kim, C; Ann, JH; et al, 28th IEEE Symposium on VLSI Technology, pp.200 - 201, 123, 2008-06 |
| Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant He, Wei; Zhang, Lu; Chan, Daniel S. H.; Cho, BJ; Zhang, L; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.30, no.6, pp.623 - 625, 2009-06 |
| Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide He, Wei; Pu, Jing; Chan, Daniel S. H.; Cho, BJ; Pu, J; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2746 - 2751, 2009-11 |
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